Multicrystalline Silicon Wafers
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Description
| SpecificationsMulticrystalline Silicon Wafers | |
| 156mm *156mm*200/±30μm | |
| Crystal & Material Properties | |
| Property | Specifications |
| Crystallinity | Multicrystalline |
| Conductivity Type/ Dopant | P/ Boron |
| Oxygen Concentration | ≤1×1018atoms/ cm3 |
| Carbon Concentration | ≤5×1016atoms/ cm3 |
| Electrical Properties | |
| Property | Specifications |
| Resistivity | 0.5-3Ω·cm |
| Minority Carrier Life Time | ≥2.0μs |
| Geometric Properties | |
| Property | Specifications |
| Geometry | Square |
| Tolerance of the Dimensions (Width/ Length) | 156mm±0.5mm |
| Thickness | 200±30μm |
| Angle between Sides | 90°±0.3° |
| Chamfer | Chamfer angle:45°±10° ；Chamfer dimension: 1.5±0.5 mm |
| TTV | ≤50μm |
| Saw mark Depth | ≤15μm |
| Chips | Chips visible as silhouette by illumination from the back are not allowed |
| Edge chips，corner chips | Length≤1.5mm；Depth≤1mm；Max.2 places, No V shape |
| Surface Properties | |
| Property | Specifications |
| Surface | As-cut and cleaned, visible contaminations |
| Cracks & Pinholes | Not allowed |
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Multicrystalline Silicon Wafers
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